Berlin 2012 – wissenschaftliches Programm
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DS: Fachverband Dünne Schichten
DS 44: Poster IV: Thin film photovoltaics; Organic electronics and photovoltaics (jointly with CPP, HL, O); Organic thin films; Trends in atomic layer deposition (Focused session)
DS 44.7: Poster
Freitag, 30. März 2012, 09:30–12:00, Poster E
Spectroscopic Characterization of Amorphous Silicon/Silicon Heterodiodes Prepared by DC Pulsed Magnetron Sputtering — •Philipp Schäfer1, Frank Nobis2, Ovidiu D. Gordan1, Hartmut Kupfer2, Frank Richter2, and Dietrich R. T. Zahn1 — 1Semiconductor Physics, Chemnitz University of Technology — 2Solid State Physics, Chemnitz University of Technology
Doped layers of hydrogenated amorphous silicon were prepared by dc magnetron sputtering onto oppositely doped crystalline silicon substrates. Defect levels of the thereby assembled heterostructure diodes were intensively studied using charge transient spectroscopy. During deposition the substrate temperature and hydrogen flow rate can be controlled individually. Energetic shifts of the defect levels occur with the variation of these key parameters. Furthermore, one can observe the influence of differently doped samples.
The influence of substrate temperature and hydrogen flow rate on the layer deposition is additionally studied by a variety of optical spectroscopy methods. Microstructure parameter as well as hydrogen content is derived from Si-H absorption in the infrared, while the Tauc-Lorentz band gap is derived from variable angle spectroscopic ellipsometry. Moreover, the parameters for which crystallization occurs were found by Raman spectroscopy. The combination of the variety of techniques provides a detailed insight in the optical, structural, and electrical properties of the samples studied.