Berlin 2012 – scientific programme

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DS: Fachverband Dünne Schichten

DS 6: Thin film photovoltaics: CIGSe + processing

DS 6.1: Talk

Monday, March 26, 2012, 11:15–11:30, H 2032

Properties of dislocations in Cu(In,Ga)Se2 film and their formation during growth — •Jens Dietrich¹, Daniel Abou-Ras², Thorsten Rissom², Thomas Unold², Tore Niermann³, Michael Lehmann³, Hans-Werner Schock², and Christian Boit¹ — ¹Technische Universität Berlin, Department of Semiconductor Devices, Einsteinufer 19, 10587 Berlin — ²Helmholtz Zentrum Berlin für Materialien und Energie, Hahn-Meitner-Platz 1, 14109 Berlin — ³Technische Universität Berlin, Institute of Optics and Atomic Physics, Hardenbergstrasse 36, 10623 Berlin

Transmission electron microscopy (TEM) studies were performed on Cu(In,Ga)Se2 (CIGSe) thin films for solar cells with a special focus on dislocations. A sample series of glass/Mo/CIGSe stacks with varying [Cu]/([Ga]+[In]) ratio were prepared by interrupting the growth processes at several stages. TEM imaging and elemental distribution maps by energy-dispersive X-ray spectroscopy gave structural and compositional information at certain film growth states. Furthermore, high resolution TEM imaging was used to confirm a structural model of dislocations in complete CIGSe solar cells and by means of in-line electron holography we examined changes in the mean inner potential. A decrease of the mean inner potential at the position of the dislocations was observed. This might be attributed to a change of the atomic density due to the dislocation, a local segregation or a charge at the dislocation core.