Berlin 2012 – scientific programme
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DS: Fachverband Dünne Schichten
DS 6: Thin film photovoltaics: CIGSe + processing
DS 6.2: Talk
Monday, March 26, 2012, 11:30–11:45, H 2032
Novel Laser Structuring Method for Chalkopyrite Solar Cells — •Manuel Schüle1, Christof Schultz1, Heinrich Endert2, Björn Rau3, Rutger Schlatmann3, Volker Quaschning1, Bert Stegemann1, and Frank Fink1 — 1University of Applied Sciences (HTW) Berlin, Wilhelminenhofstr. 75a, 12459 Berlin, Germany — 2Newport Spectra-Physics GmbH, Ruhlsdorfer Strasse 95, 14532 Stahnsdorf, Germany — 3PVcomB - Competence Centre Thin-Film- and Nanotechnology for Photovoltaics Berlin, Schwarzschildstr. 3, 12489 Berlin, Germany
In thin-film photovoltaics laser structuring is aimed to achieve appropriate monolithic serial interconnection. Generally, three structuring steps P1, P2, and P3 are necessary to separate the solar cells and to perform monolithic interconnection. However, manufacturing of chalcopyrite (CIGSe) thin film solar cells involves typically only one laser structuring step (P1), whereas two mechanical structuring steps (P2 and P3) are carried out.
In our approach, complete laser structuring of CIGSe solar cells is successfully demonstrated by application of short nanosecond laser pulses (<10 ns) with a single wavelength of 532 nm. The P1 and the P3 trenches are scribed by induced direct and induced indirect ablation respectively. For the P2 scribe, the thermal input of the ns laser pulses is used to transform the CIGSe absorber layer locally into a highly conductive compound that provides proper electrical interconnection between the front and back contact. These findings promise further simplification and flexibility to thin film solar cell production.