Berlin 2012 – wissenschaftliches Programm

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DS: Fachverband Dünne Schichten

DS 7: Organic electronics and photovoltaics I (jointly with CPP, HL, O)

DS 7.3: Vortrag

Montag, 26. März 2012, 15:45–16:00, H 2032

Contact property tailoring by SAM treatment of the Au/P3HT interface — Shahidul Alam, •Torsten Balster, and Veit Wagner — School of Engineering and Science,Jacobs University Bremen, Campus Ring 1, 28759 Bremen

The properties of the contact between the organic semiconductor and the metal not only influence the injection behaviour and limit the switching speed of an organic field effect transistor, they also determine the rectification in a Schottky diode. In this study, vertical Au/P3HT/Au structures on PET foils has been prepared and investigated by means of I-V measurements.
Due to the asymmetry in the deposition of the top and bottom metal electrode the devices showed diode, i.e. rectifying behaviour. To change the contact properties, especially the barrier heights self-assembled monolayers by 1-hexanethiol and nonafluoro-1-hexanethiol on top of the bottom electrode have been prepared prior to the P3HT and top electrode deposition.
The overall current density was reduced in comparison to the untreated sample due to the tunneling barrier introduced. However, the rectification ratio of the 1-hexanethiol has been increased by more than a factor of 2. The influence of the SAMs on the barrier height was analyzed using the Fowler-Nordheim tunneling model.