Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 100: Resistive Switching I (jointly with DS, DF, KR)

HL 100.5: Talk

Friday, March 30, 2012, 10:30–10:45, H 0111

Remanent resistance changes in metal- PrCaMnO-metal sandwich structures — •Malte Scherff, Bjoern Meyer, Julius Scholz, Joerg Hoffmann, and Christian Jooss — Institute of Materials Physics, University of Goettingen, Germany

The non-volatile electric pulse induced resistance change (EPIR) seems to be a rather common feature of oxides sandwiched by electrodes. However, microscopic mechanisms are discussed controversially. We present electrical transport measurements of sputtered Pr_0.7Ca_0.3MnO₃ films sandwiched by metallic electrodes with variation of electrode materials, device geometry and PCMO deposition parameters. Cross-plane transport measurements have been performed as function of temperature and magnetic field. Specifically, the transition from dynamic resistance changes due to non-linear transport to remanent switching is analyzed. By analyzing changes of magneto-resistance at low temperatures in different resistance states we aim for separation between interface and film contributions to switching. Comparing switching behavior in symmetric and asymmetric electrode configuration allows for identification of the active, single interface in the switching process and the origin of an observed switching polarity inversion[1]. The influence of excitation field and power on the switching characteristics of different noble metal electrodes is discussed. Samples from macroscopic devices and in situ stimulated sandwich structures were studied in a transmission electron microscope in order to investigate the induced structural, chemical and electronic changes. [1] M. Scherff et al, J.Appl.Phys. 110, 043718 (2011)