Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 102: Transport: Graphene 2 (jointly with TT, MA, DY, DS, O)

HL 102.1: Talk

Friday, March 30, 2012, 09:30–09:45, BH 334

Transport study of graphene with artificially induced defects — •Verena Martin, Johannes Jobst, Michael Krieger, and Heiko B. Weber — Lehrstuhl für Angewandte Physik, Universität Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen

We report on transport properties of ion irradiated graphene which is grown epitaxially on 6H semi-insulating silicon carbide (SiC) substrate. We investigate both monolayer graphene [1] and quasi-free standing epitaxial graphene [2]. Subsequent irradiation steps of argon and carbon ions with different ion energies into the graphene/SiC stack are performed at low temperature (4K) and room temperature. The resistivity of the graphene layer is monitored in situ. After each irradiation step temperature dependent measurements and magnetoresistance measurements are performed to study the effect of the damage. An increase of resistivity with decreasing temperature as well as a broadening of the weak localization peak could be correlated to an increase of the defect amount.
K. Emtsev et al., Nat. Mater. 8, 203 (2009)
C. Riedl et al., Phys. Rev. Lett. 103, 246804 (2009)