Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 103: Resistive Switching II (jointly with DS, DF, KR)
HL 103.3: Talk
Friday, March 30, 2012, 11:30–11:45, H 0111
Resistive switching on HfO2-based metal-insulator-metal structures: effects of the top metal electrode and the oxygen partial pressure — •Thomas Bertaud1, Damian Walczyk1, Christian Walczyk1, Steffen Kubotsch1, Malgorzata Sowinska1, Thomas Schroeder1, Christophe Vallée2, Vincent Jousseaume3, and Christian Wenger1 — 1IHP, Im Technologiepark 25, 15236 Frankfurt Oder, Germany — 2LTM Université Joseph Fourier, 17 Rue des Martyrs 38054 Grenoble, France — 3CEA-LETI Minatec, 17 Rue des Martyrs 38054 Grenoble, France
Embedded nonvolatile memories (eNVM) are attractive for a growing number of applications. One promising candidate for next-generation eNVM is based on the electrically switchable resistance change between a high and a low resistive state of a metal-insulator-metal (MIM) structure, called resistance random access memory (RRAM). Due to the cost effectivity and BEOL compatibility with (Bi)CMOS technologies, this approach is highly attractive. In this talk, the resistive switching on HfO2/bottom TiN based devices will be demonstrated. The work is focused on the impact of the top metal electrode on the switching behavior of the RRAM devices: Al, Hf and Ti (reactive non-blocking), and Cu, Pt and Au (non-reactive blocking) are used and lead to bipolar or unipolar switching, respectively [1]. The current and capacitance characteristics of the MIM diodes are studied by voltage sweeps and retention measurements under different gas ambient in order to highlight the effect of the oxygen partial pressure for a better understanding of the mechanism. [1] T. Bertaud et al., Thin Solid Films (2011).