Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 103: Resistive Switching II (jointly with DS, DF, KR)
HL 103.6: Talk
Friday, March 30, 2012, 12:15–12:30, H 0111
Nonvolatile resistive switching in Au/BiFeO3 rectifying junction — •Yao Shuai1,2, Chuangui Wu2, Wanli Zhang2, Shengqiang Zhou1, Danilo Bürger1, Stefan Slesazeck3, Thomas Mikolajick3, Manfred Helm1, and Heidemarie Schmidt1 — 1Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf, P. O. Box 510119, Dresden 01314, Germany — 2State Key Laboratory of Electronic Thin Films and Integrated Devices, Chengdu, China — 3Namlab gGmbH, Nöthnitzer Strasse 64, 01187 Dresden, Germany
BiFeO3 thin films have been grown on Pt/Ti/SiO2/Si substrates with pulsed laser deposition. RF sputtered Au has been used for the top electrode. The transport properties of the BiFeO3 thin films have been previously demonstrated to be sensitive to the interface [1]. In the present work, an interface-related resistive switching behavior with large switching ratio up to 4500 has been observed in the Au/BiFeO3/Pt structure [2]. The different polarities of the external voltage induce an electron trapping or detrapping process, and consequently change the depletion layer width below the Au Schottky contact, which is revealed by capacitance-voltage measurements and by long-term low/high resistance state capacitance transient measurements at zero bias [3]. [1] Y. Shuai et al., Appl. Phys. Lett., 98, 232901 (2011). [2] Y. Shuai et al., Appl. Phys. Express. 4, 095802 (2011). [3] Y. Shuai et al., J. Appl. Phys. 109, 124117 (2011).