HL 10: Quantum Dots and Wires: Preparation and Characterization II (mainly Arsenides)
Montag, 26. März 2012, 11:15–13:15, EW 202
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11:15 |
HL 10.1 |
Crystal Structure Tuning of Au-catalyzed Nanowires grown by MBE — Andreas Rudolph, Marcello Soda, Dieter Schuh, Josef Zweck, Dominique Bougeard, and •Elisabeth Reiger
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11:30 |
HL 10.2 |
GaAs/InAs - core/shell nanowires grown by SA-MOVPE — •Fabian Haas, Kamil Sladek, Andreas Winden, Martina von der Ahe, Thomas Weirich, Hilde Hardtdegen, and Detlev Grützmacher
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11:45 |
HL 10.3 |
Growth of an InAs shell around GaAs nanowires — •Torsten Rieger, Mihail Ion Lepsa, Thomas Schäpers, and Detlev Grützmacher
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12:00 |
HL 10.4 |
Fabrication of ultra-low density GaAs quantum dots by filling of self-organized nanoholes — •David Sonnenberg, Andreas Graf, Vera Paulava, Achim Küster, Christian Heyn, and Wolfgang Hansen
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12:15 |
HL 10.5 |
Einfluss eines vergrabenen Stressors auf das Wachstum von InGaAs mit MOCVD — •David Quandt, Jan-Hindrik Schulze, Tim David Germann, André Strittmatter, Udo Pohl und Dieter Bimberg
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12:30 |
HL 10.6 |
MOVPE grown InAs quantum dots on InGaAs strain reducing layers — •Matthias Paul, Jan Kettler, Elisabeth Koroknay, Michael Jetter, and Peter Michler
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12:45 |
HL 10.7 |
Prepatterning of GaAs substrates using microsphere photolithography for the site-controlled growth of InP quantum dots — •Ulrich Rengstl, Elisabeth Koroknay, Moritz Bommer, Michael Jetter, and Peter Michler
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13:00 |
HL 10.8 |
Relaxation of excited charge carriers in silicon nanocrystals embedded in silicon dioxide — •Andrey Moskalenko, Jamal Berakdar, Alexander Poddubny, Alexei Prokofiev, Irina Yassievich, and Serguei Goupalov
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