Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 12: "New" Materials and New Physics in "Old" Materials II
HL 12.1: Talk
Monday, March 26, 2012, 11:45–12:00, EW 015
HAXPES investigation of vacuum evaporated Bi2S3 thin films — •Sebastian ten Haaf1, Benjamin Balke2, Claudia Felser2, and Gerhard Jakob1 — 1Institut für Physik, Johannes Gutenberg-Universität Mainz, 55099 Mainz, Germany — 2Institut für Anorganische Chemie und Analytische Chemie, Johannes Gutenberg-Universität, 55099 Mainz, Germany
In order to explore new absorber materials for photovoltaics, polycrystalline Bi2S3 thin films were prepared and investigated for their usability for solar cell fabrication.
Amorphous Bi2S3 thin films were deposited by thermal evaporation of bismuth trisulphide compound under ultra-high vacuum conditions on various substrates. An amorphous-to-crystalline transition could be observed after heat treatment in argon atmosphere at different temperatures.
The first measurements with hard X-ray photoelectron spectroscopy (HAXPES) on Bi2S3 were performed. Clear effects of annealing on valence band states could be observed, in addition to this, the thin films were characterized with regard to their optical and electrical properties as well as their morphology.