Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 12: "New" Materials and New Physics in "Old" Materials II

HL 12.3: Vortrag

Montag, 26. März 2012, 12:15–12:30, EW 015

Growth and Analysis of Fe and FeCo on GaAs — •Tobias Nickel, Boris Landgraf, Sören Meyer, Taras Slobodskyy, and Wolfgang Hansen — Institut für Angewandte Physik, Universität Hamburg, 20355 Hamburg, Germany

The injection of highly spin-polarized electrons from ferromagnetic metals into semiconductor systems is an important part of spintronic applications. The main problem encountered when building such spintronic devices is the loss of spin-polarization of electrons at the metal/semiconductor interface [1]. This obstacle may be avoided by introducing a tunnel barrier between metal and semiconductor. We therefore investigate epitaxial growth as well as structural, magnetical, and electrical properties of ferromagnet/semiconductor hybrid systems. Here, we analyze the epitaxial growth of Fe and FeCo on GaAs(001) and on modulation-doped InAs heterostructures with and without a MgO layer in between. The MgO layer works as a tunnel barrier [2] for spin-injection into the semiconductor and as a diffusion-barrier to avoid intermixing at the interface.
 [1] G. Schmidt et al., Physical Review B R4790-R4793 (2000).
 [2] X. Jiang et al., Physical Review Letters 94, 1-4 (2005).