Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 12: "New" Materials and New Physics in "Old" Materials II
HL 12.7: Vortrag
Montag, 26. März 2012, 13:15–13:30, EW 015
Time-resolved photoluminescence and optical gain in Ga(NAsP) pseudomorphically grown on silicon — Nektarios Koukourakis1, Max Klimasch1, •Nils C. Gerhardt1, Martin R. Hofmann1, Sven Liebich2, Daniel Trusheim2, Martin Zimprich2, Kerstin Volz2, Wolfgang Stolz2, and Bernardette Kunert3 — 1Photonics and Terahertztechnology, Ruhr-University Bochum, Bochum, Germany — 2Material Science Center and Faculty of Physics, Philipps-University Marburg, Marburg, Germany — 3NAsP III/V GmbH, Marburg, Germany
The development of optoelectronic integrated circuits (OEICs) on silicon using the advanced complementary metal oxide semiconductor technology is one of the most important challenges in photonics today. However the realization of the key component, a reliable electrically pumped semiconductor laser grown on silicon, remains a huge challenge. The novel dilute nitride material Ga(NAsP) is a very promising candidate to fill this gap. Because of its direct nature and the capability for pseudomorphical growth on exactly oriented (001) silicon substrate Ga(NAsP) is perfectly qualified as an active material for lasers on silicon. Here we investigate the optical properties of Ga(NAsP) samples grown lattice matched on Si substrates using time-resolved photoluminescence and optical gain spectroscopy. The results indicate a significant impact of disorder-induced localization effects, which depends strongly on N content and growth conditions. However, optical gain measurements reveal high modal gain values at room temperature and demonstrate the suitability of Ga(NAsP) for laser devices on silicon.