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HL: Fachverband Halbleiterphysik

HL 12: "New" Materials and New Physics in "Old" Materials II

HL 12.8: Vortrag

Montag, 26. März 2012, 13:30–13:45, EW 015

Graphene Solution-Gated Field Effect Transistors for Bioelectronics — •Lucas Hess¹, Max Seifert¹, Michael Jansen², Vanessa Maybeck², Amel Bendali³, Serge Picaud³, Andreas Offenhäusser², Martin Stutzmann¹, Ian D. Sharp¹, and Jose A. Garrido¹ — ¹Walter Schottky Institut, TU München — ²FZ Jülich — ³Institut de la Vision, Paris

For medical applications in neuroprostheses as well as for fundamental research on neuron communication, it is of utmost importance to develop a new generation of electronic devices which can effectively detect the electrical activity of nerve cells. The relatively high electronic noise and the poor stability of silicon biosensors have motivated the search for more suitable materials. In this respect, the outstanding electronic and electrochemical performance of graphene holds great promise for bioelectronic applications.

Here, we report on arrays of graphene solution-gated field effect transistors (G-SGFETs) which can detect the electrical activity of electrogenic cells. G-SGFETs were fabricated using graphene films, which were grown by CVD on Cu and then transferred to insulating substrates where arrays of transistors were processed. We have investigated the ability of these transistors to detect the electrical activity of electrogenic cells. To this end, cardiomyocyte-like HL-1 cells have been cultured on G-SGFET arrays. Employing the transistors beneath, we were able to detect and resolve the action potentials generated by the cells. Our results clearly show that graphene transistors can outperform state-of-the-art devices for bioelectronic applications by far.