Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 12: "New" Materials and New Physics in "Old" Materials II

HL 12.9: Talk

Monday, March 26, 2012, 13:45–14:00, EW 015

Sensing with graphene solution-gated field effect transistors — •Benno Blaschke, Lucas H. Hess, Max Seifert, Martin Stutzmann, and Jose A. Garrido — Walter Schottky Institut, Technische Universität München, Germany

Graphene based solution-gated field effect transistors (SGFETs) are promising candidates for high-sensitivity biosensors due to the outstanding electronic and chemical properties of graphene such as the high charge carrier mobility and the good biocompatibility. Sensors for various analytes as well as cell action potentials have already been realized based on graphene SGFETs.

In this work, an array of graphene SGFETs is fabricated on large-scale CVD-grown graphene using optical lithography. We present an electrical characterization of the graphene SGFETs and report on their long-term stability. Hall-effect measurements are performed to obtain more detail on the charge carrier density and mobility of the graphene under electrolytic gate.

In order to use graphene SGFETs for sensing applications, the influence of the electrolyte composition on the transistor needs to be investigated and understood. Therefore, the effect of pH and different ion species on the transistor current is analyzed. These experimental results are compared to a model describing the graphene-electrolyte interface.