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11:45 |
HL 12.1 |
HAXPES investigation of vacuum evaporated Bi2S3 thin films — •Sebastian ten Haaf, Benjamin Balke, Claudia Felser, and Gerhard Jakob
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12:00 |
HL 12.2 |
Radial distribution function analysis of ultra low-k interlayer dielectric from electron diffraction — •Pradeep Singh, Sven Zimmermann, Steffen Schulze, Stefan Schulz, and Michael Hietschold
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12:15 |
HL 12.3 |
Growth and Analysis of Fe and FeCo on GaAs — •Tobias Nickel, Boris Landgraf, Sören Meyer, Taras Slobodskyy, and Wolfgang Hansen
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12:30 |
HL 12.4 |
Disorder-parameters in Ga(AsBi) — •Christian Wagner, Sebastian Imhof, Alexej Chernikov, Martin Koch, Nico S. Köster, Kolja Kolata, Sangam Chatterjee, Stefan W. Koch, Xianfeng Lu, Shane R. Johnson, Dan A. Beaton, Thomas Tiedje, Oleg Rubel, and Angela Thränhardt
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12:45 |
HL 12.5 |
Chemical Composition of Novel III/V-alloys — •Tatjana Wegele, Vivien Voßebürger, Rafael Fritz, Kakhaber Jandieri, and Kerstin Volz
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13:00 |
HL 12.6 |
Wachstum und Charakterisierung von verdünnt - stickstoffhaltigem (GaIn)(NAs) auf InP mittels MOVPE — •Peter Ludewig, Katharina Werner, Wolfgang Stolz und Kerstin Volz
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13:15 |
HL 12.7 |
Time-resolved photoluminescence and optical gain in Ga(NAsP) pseudomorphically grown on silicon — Nektarios Koukourakis, Max Klimasch, •Nils C. Gerhardt, Martin R. Hofmann, Sven Liebich, Daniel Trusheim, Martin Zimprich, Kerstin Volz, Wolfgang Stolz, and Bernardette Kunert
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13:30 |
HL 12.8 |
Graphene Solution-Gated Field Effect Transistors for Bioelectronics — •Lucas Hess, Max Seifert, Michael Jansen, Vanessa Maybeck, Amel Bendali, Serge Picaud, Andreas Offenhäusser, Martin Stutzmann, Ian D. Sharp, and Jose A. Garrido
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13:45 |
HL 12.9 |
Sensing with graphene solution-gated field effect transistors — •Benno Blaschke, Lucas H. Hess, Max Seifert, Martin Stutzmann, and Jose A. Garrido
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