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HL: Fachverband Halbleiterphysik

HL 14: Focus Session: Site-selective Growth of single Quantum Dots

HL 14.3: Topical Talk

Montag, 26. März 2012, 16:00–16:30, ER 164

Positioned growth and optical properties of InP/GaInP islands and coupled quantum dot structures — •Michael Jetter¹, Elisabeth Koroknay¹, Ulrich Rengstl¹, Moritz Bommer¹, Christian Kessler¹, Heinz Schweizer², and Peter Michler¹ — ¹Institut für Halbleiteroptik und Funktionelle Grenzflächen und Research Center SCoPE, Universität Stuttgart, Deutschland — ²4. Physikalisches Institut, Universität Stuttgart, Deutschland

In this talk we show a route towards the realization of laterally and vertically positioned quantum dot structures. The lateral positioning is achieved by self-assembled nucleation of InP islands on a regular patterned GaAs surface during the growth process in the metal-organic vapour-phase (MOVPE) system. A low-cost method, called microsphere photolithography, is presented to produce the regular hole pattern.

Next to this, strain driven vertically aligned asymmetric coupled quantum dots (QDs) were highlighted. By controlling the vertical distance between the single QD layers the electronic coupling between the nanostructures can be modified. Photoluminescence experiments reveal the phonon assisted tunneling behavior of either the electron or the whole exciton in dependence of the spacer distance between the dots.