Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe

HL: Fachverband Halbleiterphysik

HL 16: II-VI Semiconductors I

HL 16.2: Vortrag

Montag, 26. März 2012, 15:15–15:30, EW 202

New approach towards backthinning and removal of MBE growth substrates — •Steffen Bieker, Michael Rüth, Tobias Kießling, Wolfgang Ossau, and Laurens W. Molenkamp — Physikalisches Institut (EP3) der Universität Würzburg, 97074 Würzburg, Germany

Epitaxial lift-off techniques (ELO) have attracted interest since the late 1980s [1]. We report on a new two-step approach towards the removal of MBE growth substrates. Other than established ELO techniques, our process does not rely on a sacrificial release layer. Pure mechanical lapping allows for several micrometer of residual substrate thicknesses. Residue-free removal of the GaAs substrates from II-VI semimagnetic resonant tunnelling diodes (RTD) is demonstrated. HR-XRD analysis indicates that the crystalline integrity of complex RTD heterostructures is preserved if a silicon frame is mounted during the lapping step to decouple shear forces from the active device layers. Smoothing of interfaces due to strain relaxation allows to assess the microscopic origin of long-debatable transport characteristics.

[1] Yablonovitch et al., APL 51, 2222 (1987)