Berlin 2012 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors

HL 24.15: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Sol-Gel-assembly of micro-crystalline silicon carbide and EPR-measurements — •Tim Baumgarten, Andre Konopka, Eva Rauls, Wolf-Gero Schmidt, Uwe Gerstmann, and Siegmund Greulich-Weber — Physics, University of Paderborn, Paderborn, Germany

Micro-crystalline semiconductor materials offer a huge amount of optical and electrical applications due to their vast surface to volume ratio. Silicon carbide (SiC) has become a material of interest in this field, because of its wide band gap and chemical stability, offering potential applications as semiconductor substrate and high power applications material, as well as chemical catalytic structure. In order to benefit from these abilities, it is most important to get a deep understanding of the crystalline structure and the electro-optical characteristics resulting from the large surface. In our sol-gel process we produce SiC micro-crystals with various sizes and dopings. We performed Electron Paramagnetic Resonance measurements (EPR), to obtain information on the electronic structure of our samples, Debye-Scherrer X-Ray diffraction to analysis the crystalline parameters and optical spectroscopy to analysis the electro-optical characteristics. In order to get a deeper understanding of our experimental results, we performed calculations via density functional theory (DFT). In this contribution we present our results on the analysis of different surfaces of micro-crystaline SiC.