Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors

HL 24.17: Poster

Montag, 26. März 2012, 16:00–19:00, Poster D

Spatially-resolved photoluminescence of silicon vacancy centers in 6H-SiC — •Franziska Fuchs^1,2, Georgy Astakhov¹, Alexandra Soltamova³, Pavel Baranov³, and Vladimir Dyakonov^1,2 — ¹Experimental Physics VI, Julius Maximilian University of Würzburg, D-97074 Würzburg — ²ZAE Bayern, D-97074 Würzburg — ³Ioffe Physical-Technical Institute, St. Petersburg, RU-194021 Russia

Defects in silicon carbide (SiC) are considered as promising candidates for qubits operating at ambient conditions (i.e., room temperature and zero magnetic field). As a rule, defects in SiC are created by electron or neutron irradiation, which is extensive and therefore causes damage of the crystal lattice.

In this study we demonstrate that 6H-SiC monocrystals grown by high temperature Lely technique contain silicon vacany (V_Si ) defects, even without irradiation. We performed systematic studies of the V_Si photoluminescence (PL) as a function of temperature. Strong PL signal observed at room temperature confirms high crystalline quality of our SiC monocrystals. Moreover, using confocal arrangement we performed spatially resolved PL measurements and demonstrated homogeneous distribution of V_Si in all three dimensions throughout the samples.

Summarizing, the high temperature Lely growth technique seems to be an appropriate method for the fabrication of high quality SiC samples for quantum information processing.