Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors

HL 24.18: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Organic Functionalization of 3C-SiC Surfaces — •Matthias Sachsenhauser¹, Sebastian Schoell¹, Alexandra Oliveros², John Howgate¹, Martin Stutzmann¹, Stephen Saddow², and Ian Sharp¹ — ¹Walter Schottky Institut, Technische Universitaet Muenchen, Garching, Germany — ²Electrical Engineering Department, University of South Florida, Tampa, FL, USA

3C-SiC is a promising substrate material for electronic and mechanical biosensing applications due to its exceptional stability, strength, and biocompatibility. Although the quality of epitaxially grown 3C-SiC on Si has significantly improved in recent years, only limited work has been devoted to establishing methods of bio-organic functionalization of its surfaces. Here, we utilize wet chemical processing techniques for the formation of self-assembled aminopropyldiethoxymethylsilane (APDEMS) and octadecyltrimethoxysilane (ODTMS) monolayers on n-type (100) and (111) 3C-SiC. Chemical activation of the surfaces is achieved by HF treatment in a first step, followed by reaction with ODTMS and APDEMS molecules. The structural and chemical properties of the surfaces are characterized using static water contact angle, atomic force microscopy, and X-ray photoelectron spectroscopy. These techniques verify the formation of covalently bound monolayers. Contact potential difference and surface photovoltage measurements are used to examine the near-surface band-bending and changes of interfacial dipoles due to chemical binding. Finally, ODTMS layers are micropatterned by means of lithographically-defined oxidation and the resulting changes of local wettability are illustrated.