Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors

HL 24.1: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Spin Noise Spectroscopy — •Fabian Berski, Carsten Schulte, Katharina-Sophie Isleif, Jens Hübner, and Michael Oestreich — Institute for Solid State Physics, Leibniz Universität Hannover, Appelstr. 2, D-30167 Hannover, Germany

We study the spin dynamics of localized non interacting donor electrons in Gallium Arsenide at low temperatures by means of all optical spin noise spectroscopy (SNS) [1]. SNS avoids the generation of free carries by tuning the cw–probe laser light to the transparent regime of the semiconductor and is therefore a promising tool to reveal hyperfine interaction dominated dephasing processes, as they are expected in low doped semiconductor systems in thermal equilibrium. The experiment is carried out on a specially prepared, MBE–grown GaAs sample. The detected signal contains the longitudinal and transversal dephasing with respect to the effective stochastic magnetic field caused by nuclear spins. The fast transversal timescale is 4.5±3 ns, which is in good agreement with previous reported measurement [1]. The second dephasing time is about 127ns, which states a lower limit on the longitudinal spin dephasing time.

[1] G. M. Müller, M. Oestreich, M. Römer, and J. Hübner, Semiconductor spin noise spectroscopy: Fundamentals, accomplishments, and challenges, Physica E 43, 569 (2010).