Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors

HL 24.4: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Site-controlled In droplets on GaAs substrates by in situ focused ion beam implantation and droplet epitaxy — •Yu-Ying Hu, Dirk Reuter, and Andreas D. Wieck — Lehrstuhl für Angewandte Festkörperphysik, Ruhr-Universität Bochum, D-44780 Bochum, Germany

We use a focused ion beam (FIB) to modify (100) GaAs surfaces so that subsequent molecular beam epitaxy (MBE) overgrowth forms In droplets at pre-selected sites. The droplets are then crystallized into InAs by supplying As. During the process of crystallization, In droplets can be transformed into InAs quantum dots or quantum rings by tuning substrate temperature and As flux. In this study, site-controlled single and paired In droplets have been fabricated with the sizes from 80 nm to 150 nm, depending on the focus and the ion fluence. The In amount is also an important parameter for the site-selected droplet formation. The distance between the paired droplets is so far closed to 150 nm by utilizing the ability of FIB patterning.