Berlin 2012 – wissenschaftliches Programm
Bereiche | Tage | Auswahl | Suche | Aktualisierungen | Downloads | Hilfe
HL: Fachverband Halbleiterphysik
HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors
HL 24.6: Poster
Montag, 26. März 2012, 16:00–19:00, Poster D
Evolution & optical characteristics of self assembled III-nitride nanowires formed by reactive ion etching — •Anna Haab1,2, Martin Mikulics1,2, Toma Stoica1,2, Jürgen Moers1,2, Eli Sutter3, Beata Kardynal1,2, Sally Rieß1,2, Andreas Winden1,2, Hilde Hardtdegen1,2, and Detlev Grützmacher1,2 — 1Peter Grünberg Institute-9, Forschungszentrum Jülich, 52425 Jülich, Germany — 2JARA-Fundamentals of Future Information Technology — 3Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973, USA
In the past group III-nitrides have received increasing interest for photovoltaic applications (PV) due to their large band gap span in the visible range from 0.7 eV to 3.4 eV. An enhancement of photovoltaic cell performance could be achieved by using nanostructured material which has the possibility to absorb incoming photons more effectively. In this work we studied a simple method for nanostructure fabrication: reactive ion etching (RIE) without any lithographic procedure. The RIE process was optimized to achieve a dense array of nanowires with high aspect ratios. Metal-organic vapor phase epitaxy (MOVPE) was employed to deposit group III-N layers on c-plane sapphire. Subsequent maskless RIE yields a self assembled array of nanowires. Finally the structural and optical characteristics of the nanostructures were investigated. They exhibit intense bandgap emission in accordance with transmission electron microscopy investigations, which indicate that the nanostructures are without dislocations. RIE on unmasked GaN templates may be a viable route to obtain materials for PV.