Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors
HL 24.7: Poster
Montag, 26. März 2012, 16:00–19:00, Poster D
Epitaxial GaN around ZnO nanopillars — •Mohamed Fikry1, Manfred Madel2, Ingo Tischer2, Ren Zhe1, Klaus Thonke2, and Ferdinand Scholz1 — 1Institut für Optoelektronik, Universität Ulm, Albert-Einstein-Allee 45, 89081 Ulm — 2Institut für Quantenmaterie, Gruppe Halbleiterphysik, Universität Ulm, Albert-Einstein-Allee 45, 89081 Ulm
We report on the investigation of the epitaxial quality of GaN layers forming non-polar m-plane facets grown coaxially around ordered ZnO nanopillars. The GaN layers were grown using Metal Organic Vapor Phase Epitaxy (MOVPE). For developing a scalable process, in a first step successful position control of single ZnO nanopillars grown on top of ordered GaN pyramids is achieved. At growth temperatures above 800°C and using hydrogen as a carrier gas, the ZnO nanopillars start to dissolve during the GaN growth, leaving hollow GaN nanotubes. A strong and broad luminescence at 2.8 eV indicates the presence of heavily Zinc doped GaN layers. Characterization involves photoluminescence, scanning electron microscopy, transmission electron microscopy and cathodoluminescence.