Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 24: Poster Session: Ge/Si/SiC / III - V Semiconductors

HL 24.9: Poster

Montag, 26. März 2012, 16:00–19:00, Poster D

Confinement effects and band gap tuning of III-Nitride nanowires — •Klaara Viisanen, Laura Oikkonen, Katri Laaksonen, Maria Ganchenkova, and Risto Nieminen — Aalto University School of Science, Espoo, Finland

Nanowires of semiconductor materials are expected to play an important role in future nanoscale technologies such as third generation photovoltaics and light emitting diodes. It is very important that the electronic properties of a wire can be modified by changing its size. This opens possibilities for band gap engineering without alloying, for which we need a clear understanding of the effect of confinement on the electronic properties of the nanostructures. One of the key choices for nanowire materials are group III-V compound semiconductors. The aim of this work is to computationally examine how the size of the structure affects the width of the band gap for three different materials: AlN, GaN and InN. In addition to the confinement, the band structures of nanowires are also affected by the treatment of their highly reactive surfaces. This has been taken into account by considering two types of surfaces: clean and hydrogen-passivated. The calculations are performed by using three different approaches: density-functional theory within the semilocal approximation (PBE), a range-separated hybrid functional (HSE06) and the GW approximation.