Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 25: Poster Session: GaN - Optical Properties & Preparation and Characterization & Devices
HL 25.12: Poster
Monday, March 26, 2012, 16:00–19:00, Poster D
Near-field scanning optical microscopy of infrared emitting semiconductor nanostructures — •Alexander Senichev1, Uri Givan1, Oussama Moutanabbir1, Vadim Talalaev2, and Peter Werner1 — 1Max Planck Institute of Microstructure Physics, Weinberg 2, D-06120 Halle (Saale), Germany — 2Centre for Innovation Competence SiLi-nano, Martin-Luther-University, Karl-Freiherr-von-Fritsch-Str. 3, 06120 Halle (Saale), Germany
The fabrication of low-dimensional semiconductor materials with controlled variation of structural parameters in nanometer scale is fascinating activity in solid-state research. These structures are interested for study the fundamental physical properties and possibilities of their application in advanced optoelectronic devices as well. Optical spectroscopy is one of the most powerful tools for investigation of electronic and optical properties of low-dimensional semiconductor nanostructures which are determined by quantum-mechanical confinement of electronic wave functions. Using near-field scanning optical microscopy (NSOM) allows one to study these properties of single nanostructures with sub-wavelength spatial resolution.
In this work we address abilities of our NSOM technique to perform space resolved experiments at low temperature. We will report on results of a near-field optical study of semiconductor nanostructures, e.g. single Si nanowires and InGaAs nanoclusters. The combination of NSOM data with TEM, SEM, and Raman spectroscopy opens the possibility to get complete information about properties of low-dimensional nanostructures.