Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 25: Poster Session: GaN - Optical Properties & Preparation and Characterization & Devices

HL 25.14: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Low voltage spatially resolved cathodoluminescence measurements on nitride semiconductors — •Matthias Hocker¹, Ingo Tischer¹, Robert A.R. Leute², Ferdinand Scholz², and Klaus Thonke¹ — ¹Institut für Quantenmaterie, Gruppe Halbleiterphysik, Universität Ulm, 89069 Ulm — ²Institut für Optoelektronik, Universität Ulm, 89069 Ulm

Cathodoluminescence (CL) measurements with very low acceleration voltages can drastically improve spatial resolution. For low electron energies of 550−2000 eV and small working distances of 2−4 mm in the scanning electron microscope, we achieve a spatial resolution down to the diffusion length of the generated excitons. We demonstrate the application of low voltage CL measurements to InGaN quantum wells, and compare the results to Monte Carlo simulations.