Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 25: Poster Session: GaN - Optical Properties & Preparation and Characterization & Devices

HL 25.16: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Photoluminescence of cubic AlGaN layers — •Florian Hörich¹, Sarah Osterburg¹, María Fátima Romero¹, Martin Feneberg¹, Thorsten Schupp², Christian Mietze², Donat J. As², and Rüdiger Goldhahn¹ — ¹Otto-von-Guericke University Magdeburg, Germany — ²Universität Paderborn, Department Physik, Paderborn, Germany

Thin cubic AlGaN layers grown by melcular beam epitaxy were investigated by photoluminescence (PL) at variable temperatures. Excitation was provided by λ=193nm ArF*-excimer laser pulses. We study localization properties of the ternary alloy over the whole composition range by analyzing PL peak position, full width at half maximum, and intensity. Model calculations are presented and compared to the experimental data yielding parameters like the characteristic localization energy. The evolution from direct (GaN) to indirect (AlN) semiconductor is explored.