Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 25: Poster Session: GaN - Optical Properties & Preparation and Characterization & Devices

HL 25.20: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

MBE growth and characterization of group III/N quantum dots on various templates — •Christopher Hein, Andreas Kraus, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter — Institut für Angewandte Physik, TU Braunschweig

Devices based on quantum dots are expected to overcome some of the limitations of quantum well based structures opening the way to applications such as laser diodes and single photon sources. Our experiments include RF MBE (Riber 32) grown self-organized group III/N dots using Stranski-Krastanov (SK) growth mode under metal rich conditions. Various templates including AlN were used with sapphire and SiC as substrates. Afterwards the dots were capped, allowing studies of the optical properties.

In situ RHEED reveals a dotty pattern indicating 3D island formation and therefore SK growth mode. AFM characterization of the samples hints at rough surface morphology with dot-like features. The structural properties were investigated with XRD. Concerning the AlN buffer layer XRD revealed an improvement for optimized growth conditions. The optical properties were investigated using a UV photoluminescence setup. We discuss PL studies of the samples as well as the optimization of dot formation via adjusted growth conditions.