Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 25: Poster Session: GaN - Optical Properties & Preparation and Characterization & Devices
HL 25.7: Poster
Montag, 26. März 2012, 16:00–19:00, Poster D
Energy transfer dynamics of the Mn 3d5 and Tb 4f8 luminescence in ZnS:Mn,Tb nanostructures — •Uwe Kaiser1, Sebastian Gies1, Limei Chen1, Wolfram Heimbrodt1, Sebastian Geburt2, and Carsten Ronning2 — 1Dept. of Physics, Philipps-University Marburg — 2Institute of Solid State Physics, Friedrich-Schiller University
The photoluminescence (PL) decay characteristics of ZnS nanostructures doped with different luminescence centers can be described by a modified Förster model taking into account the concentration quenching as well as the dimensionality of the nanostructures. To check the general validity of this model, nanostructures of diverse morphology were doped with two different luminescence centers, namely Terbium and Manganese with concentrations of 4 · 10−6% to 4% by ion implantation. The PL transients of the internal Tb2+(4f8) and the Mn2+(3d5) transitions were measured over four orders of magnitude.
For wires as well as for belts an enhancement of the effective dimensionality could be observed for increasing Mn concentration at 10K. Measurements at room temperature indicate, however, again a reduction of the effective dimensionality, due to the enhanced transfer probability inside the subsystem of the luminescence centers. Temperature treatment and ion irradiation were used to incorporate additional defects for a thorough investigation of the energy transfer influenced by nonradiative killer centers.