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16:00 |
HL 25.1 |
Feedback Control of a Quantum Dot Cavity-QED System — •Franz Schulze, Alexander Carmele, and Andreas Knorr
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16:00 |
HL 25.2 |
Time Resolved Generallized Ellipsometry — •Christian Heinrichs, Chris Sturm, Helena Franke, Steve Linke, Tammo Böntgen, Rüdiger Schmidt-Grund, and Marius Grundmann
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16:00 |
HL 25.3 |
Spectral signatures of excitonic BEC in Cu2O — •Rico Schwartz, Siegfried Sobkowiak, Dirk Semkat, Thomas Koch, Holger Fehske, and Heinrich Stolz
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16:00 |
HL 25.4 |
Resonance Raman and Selection Rules in Cuprous Oxide — •Ovidiu Dorin Gordan, Salvan Georgeta, Schäfer Philipp, Fronk Michael, and Dietrich R.T. Zahn
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16:00 |
HL 25.5 |
Vibrational spectra of different phases of CuxOy — •Christian Reindl, Thomas Sander, Daniel Reppin, Bruno K. Meyer, and Peter J. Klar
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16:00 |
HL 25.6 |
Photoluminescence investigations of differently annealed and doped SrTiO3 single crystals in varying atmospheres — •Juliane Hanzig, Barbara Abendroth, Florian Hanzig, Hartmut Stöcker, and Dirk C. Meyer
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16:00 |
HL 25.7 |
Energy transfer dynamics of the Mn 3d5 and Tb 4f8 luminescence in ZnS:Mn,Tb nanostructures — •Uwe Kaiser, Sebastian Gies, Limei Chen, Wolfram Heimbrodt, Sebastian Geburt, and Carsten Ronning
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16:00 |
HL 25.8 |
Investigation of Parametrizations for the Valence Band Structure of GaN — •Felix Schwarz, Steve Lenk, and Erich Runge
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16:00 |
HL 25.9 |
Optical second harmonic spectroscopy of GaAs excitons in crossed electric and magnetic fields — •David Brunne, Marco Lafrentz, Victor Pavlov, Roman Pisarev, Dmitri Yakovlev, and Manfred Bayer
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16:00 |
HL 25.10 |
Long-range transport of indirect excitons by moving strain dots in a GaAs double quantum wells — •Snežana Lazić, Rudolf Hey, and Paulo Santos
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16:00 |
HL 25.11 |
Photoluminescence line shape features of carbon delta-doped GaAs heterostructures — Jürgen Schuster, •Tae Yang Kim, Edwin Batke, Dirk Reuter, and Andreas Wieck
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16:00 |
HL 25.12 |
Near-field scanning optical microscopy of infrared emitting semiconductor nanostructures — •Alexander Senichev, Uri Givan, Oussama Moutanabbir, Vadim Talalaev, and Peter Werner
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16:00 |
HL 25.13 |
Direct determination of piezoelectric coefficients for GaN by AFM — •Uwe Röder, Frank Lipski, Martin Feneberg, Ferdinand Scholz, and Klaus Thonke
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16:00 |
HL 25.14 |
Low voltage spatially resolved cathodoluminescence measurements on nitride semiconductors — •Matthias Hocker, Ingo Tischer, Robert A.R. Leute, Ferdinand Scholz, and Klaus Thonke
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16:00 |
HL 25.15 |
Untersuchung von InGaN-basierten Quantenpunktsystemen mittels STEM Z-Kontrast — •Alexander Würfel, Thorsten Mehrtens, Christian Tessarek, Timo Aschenbrenner, Detlef Hommel und Andreas Rosenauer
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16:00 |
HL 25.16 |
Photoluminescence of cubic AlGaN layers — •Florian Hörich, Sarah Osterburg, María Fátima Romero, Martin Feneberg, Thorsten Schupp, Christian Mietze, Donat J. As, and Rüdiger Goldhahn
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16:00 |
HL 25.17 |
Ultraviolet photoluminescence spectroscopy of homo- and heteroepitaxially grown AlN — •Christoph Reich, Viola Küller, Arne Knauer, Martin Feneberg, Jessica Schlegel, Markus Weyers, Rüdiger Goldhahn, and Michael Kneissl
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16:00 |
HL 25.18 |
Effect of growth parameters and annealing on the p-doping of GaN:Mg — •Gunnar Kusch, Martin Frentrup, Tim Kolbe, Tim Wernicke, Markus Pristovsek, and Michael Kneissl
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16:00 |
HL 25.19 |
Optimization of the internal and external quantum efficiency of high In content GaInN LED structures — •Fedor Alexej Ketzer, Holger Jönen, Ailun Zhao, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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16:00 |
HL 25.20 |
MBE growth and characterization of group III/N quantum dots on various templates — •Christopher Hein, Andreas Kraus, Heiko Bremers, Uwe Rossow, and Andreas Hangleiter
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16:00 |
HL 25.21 |
Investigation of the incorporation of Mg as p-dopant in GaN grown by metal modulated epitaxy — •Thorsten Klein, Stephan Figge, Tomasz Krajewski, Marek Godlewski, and Detlef Hommel
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16:00 |
HL 25.22 |
Implantation studies on silicon doped group-III nitride semiconductors — Ronnie Simon, •Reiner Vianden, and Klaus Köhler
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16:00 |
HL 25.23 |
External oxidation of GaN studied by Perturbed Angular Correlations — •Michael Steffens, Reiner Vianden, and Alberto Pasquevich
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16:00 |
HL 25.24 |
Electrochemical characterization of Si- and Mg- doped GaN nanowire electrodes — •Jens Wallys, Florian Furtmayr, Jörg Teubert, Wladimir Schäfer, Jörg Schörmann, and Martin Eickhoff
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16:00 |
HL 25.25 |
Investigation of efficiency of blue and green GaN based LEDs — •Ailun Zhao, Uwe Rossow, and Andreas Hangleiter
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16:00 |
HL 25.26 |
Current-injection and carrier confinement in InAlGaN ultraviolet light emitting diodes — •M.-A. Rothe, T. Kolbe, J. Stellmach, F. Mehnke, T Wernicke, P. Vogt, and M. Kneissl
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16:00 |
HL 25.27 |
Performance Enhancement of InAlN/AlN GaN-HEMTs by using In-Situ SiN Passivation for High Temperature Applications — •Alexander Alexewicz, Paul Marko, Mohammed Alomari, Hannes Behmenburg, Christoph Giesen, Michael Heuken, Dionyz Pogany, Erhard Kohn, and Gottfried Strasser
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