Berlin 2012 – scientific programme

Parts | Days | Selection | Search | Updates | Downloads | Help

HL: Fachverband Halbleiterphysik

HL 26: Poster Session: Heterostructures - Preparation and Characterization - Impurities / Amorphous Semiconductors

HL 26.10: Poster

Monday, March 26, 2012, 16:00–19:00, Poster D

Deposition and characterization of zincoxynitride — •Elisabeth A. Zolnowski, Johannes Bieber, Gunther Haas, Andreas Laufer, Sebastian Eisermann, Stefan Lautenschläger, and Bruno K. Meyer — I. Physikalisches Institut Giessen, Justus-Liebig-Universität, Heinrich-Buff-Ring 16, 35392 Giessen, DE-Germany

The first solely ZnO based light-emitting diode was produced in 2005 with PLD on ScAlMgO₄-substrates by the group of Tsukazaki et al. For special applications, like blue or ultraviolet diodes, p-type ZnO is necessary. But the acceptor doping of ZnO and the production in industrial scales and methods, like chemical vapor deposition (CVD), is still a current problem. A promising approach is to incorporate group V impurities into the ZnO lattice. Due to its ionic and covalent radii nitrogen seems to be the most promising candidate. Thus, we tried to deposit highly doped ZnO:N with a homebuilt CVD setup by varying the type of substrate, the substrate temperature, the oxygen precursor and its flow. We investigated the epitaxialy grown ZnO:N layers by secondary ion mass spectrometry (SIMS), raman spectroscopy and x-ray diffraction (XRD).