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HL: Fachverband Halbleiterphysik
HL 26: Poster Session: Heterostructures - Preparation and Characterization - Impurities / Amorphous Semiconductors
HL 26.12: Poster
Montag, 26. März 2012, 16:00–19:00, Poster D
Cu2O thin films grown by chemical vapour deposition — •Johannes Bieber, Sebastian Eisermann, Stefan Lautenschläger, Achim Kronenberger, Andreas Laufer, Gunther Haas, and Bruno K. Meyer — I. Physics Institute, Justus-Liebig-University Giessen, Heinrich-Buff-Ring 16, 35392 Giessen, DE-Germany
Today the world energy demand is mainly covered by limited resources, like oil, coal or gas. So it becomes more and more important to find an alternative, renewable energy source. Solar cells could be the solution or a part of it, when they are cheap, sustainable and clean. The p-type semiconductor cuprous oxide (copper(I) oxide, Cu2O) with a direct band gap of 2.17 eV is a suitable candidate, because it is a cheap and nontoxic optoelectronic material system. The theoretical efficiency is approximately 23 % which makes it a possible candidate for a top cell in cascade solar cells. For that reason the aim of this study was to investigate the heteroepitaxial growth of cuprous oxide by CVD with different copper and oxygen precursors, various growth parameters and different substrates. The effects of different growth conditions on the crystalline, electrical, optical and vibrational properties as well as the incorporated impurities were examined.