Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 26: Poster Session: Heterostructures - Preparation and Characterization - Impurities / Amorphous Semiconductors
HL 26.2: Poster
Monday, March 26, 2012, 16:00–19:00, Poster D
Using of solid solution and rust of AlGaAs for creating optoelectronic devices — •Lia Trapaidze1, Raphiel Chikovani2, Gela Goderdzishvili2, and Maia Jgenti2 — 1Dep. of Physics, Tbilisi State University, 3 Chavchavadze Ave 0128, Tbilisi, Georgia — 2Dep. of Physics, Georgian Technical University, 77 Kostava 0175, Tbilisi, Georgia
Among the semoconductive devices one of the important are many elements indicators of light emission. High efficiency of indicators emission and increasing of quality elements was investigated. For increasing efficiency of indicators emission very perspective using heterostructures based on AlGaAs. It is recommended to use own thermal rust of GaAs and GaAlAs in the GaAs-AlAs heterostructures. Method of thermal treatment is very interesting to use in integral optics, because GaAs and GaAlAs has very important properties.