Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 26: Poster Session: Heterostructures - Preparation and Characterization - Impurities / Amorphous Semiconductors
HL 26.8: Poster
Montag, 26. März 2012, 16:00–19:00, Poster D
Electronic and transport properties of In2O3 single crystals — •Valentina Scherer1, Christoph Janowitz1, Alica Krapf1, Dorothee Braun1, Helmut Dwelk1, Klaus Irmscher2, Zbigniew Galazka2, and Recardo Manzke1 — 1Humboldt-Universität zu Berlin, Institut für Physik, Newtonstr. 15, Berlin, Germany — 2Leibniz-Institut für Kristallzüchtung, Max-Born-Str. 2, Berlin, Germany
The macroscopic and microscopic electronic properties of high quality In2O3 single crystals grown by two methods, namely chemical vapor transport (CVT) and melt growth, were investigated. The temperature dependent transport properties such as resistivity and Hall coefficient were compared. Additionally the In2O3 crystals were annealed in oxygen flow for different time spans to study effects on the doping due to different oxygen contents. Subsequently the temperature dependent mobility and resistivity of the annealed crystals were compared. Furthermore the electronic properties of In2O3 crystals from the melt and from CVT growth were investigated using angle resolved photoemission (ARPES), enabling a comparison of the band structure. In2O3 crystals from both growth methods revealed very similar band structure with a very broad valence band and a partially filled conduction band (CB) at the Γ-point. The partially filled CB bent below the Fermi energy is characteristic of a degenerate semiconductor. Additionally the temperature dependence of the band structure and the band gap were determined by ARPES.