Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 29: III-V Semiconductors I (mainly Nitrides)

HL 29.11: Talk

Tuesday, March 27, 2012, 12:15–12:30, EW 201

Crystal field investigations of rare earth doped aluminum nitride — •Ulrich Vetter¹, Tristan Koppe¹, Takashi Taniguchi², John B. Gruber³, Gary W. Burdick⁴, and Hans Hofsäss¹ — ¹2. Physikalisches Institut, Georg-August-Universität Göttingen, Friedrich-Hund-Platz 1, 37077 Göttingen — ²National Institute for Materials Science, Namiki 1 - 1, Tsukuba, Ibaraki 305-0044, Japan — ³Department of Physics and Astronomy, The University of Texas at San Antonio, San Antonio, 4 Texas 78249-0697, USA — ⁴Department of Physics, Andrews University, Berrien Springs, Michigan 49104-0380, USA

Aluminum nitride belongs to the most promising semiconducting rare earth hosts due to its large band gap of around 6.2 eV and its high thermal conductivity, thus showing properties which make it useful for high power light emitting devices. In this work we are comparing the optical properties of aluminum nitride doped with rare earths during high-temperature, high-pressure synthesis to aluminum nitride doped by ion implantation, in detail considering the crystal field analyses for selected rare earth ions. Additionally the influence of co-doping with e.g. oxygen and fluorine on the optical properties of the host matrix and the rare earth intra-4f electron transitions is discussed, together with issues regarding electrical contacts.