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Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 29: III-V Semiconductors I (mainly Nitrides)

Dienstag, 27. März 2012, 09:30–12:30, EW 201

09:30 HL 29.1 Coupled LO-Phonon-Plasmon Modes in Si- and Ge-doped GaN — •Max Bügler, Stephanie Fritze, Armin Dadgar, Alois Krost, and Axel Hoffmann
09:45 HL 29.2 Influence of electron beam annealing on the structural and optical properties of GaN:Mg — •Christian Nenstiel, Marc Hoffmann, Trevor Manning, Gordon Callsen, Ramon Collazo, James Twiedie, Zlatko Sitar, Matthew Phillips, and Axel Hoffmann
10:00 HL 29.3 Surface states and band alignment of polar and nonpolar InN films studied by in-situ photoelectron spectroscopy — •Marcel Himmerlich, Anja Eisenhardt, and Stefan Krischok
10:15 HL 29.4 Non-linear piezoelectric polarization in III-V semiconductors — •Pierre-Yves Prodhomme, Annie Beya-Wakata, and Gabriel Bester
10:30 HL 29.5 Understanding and controlling In incorporation on InGaN surfaces: An ab initio approach — •Andrew Duff, Liverios Lymperakis, and Jörg Neugebauer
10:45 HL 29.6 Excitonic effects and optical properties of InxGa1−xN and InxAl1−xN alloys: A first-principle study — •Luiz Claudio de Carvalho, Jürgen Furthmüller, and Friedhelm Bechstedt
11:15 HL 29.7 MOVPE growth of semi-polar GaN LED structures on planar Si(112) and Si(113) substrates — •Roghaiyeh Ravash, Armin Dadgar, Anja Dempewolf, Peter Veit, Thomas Hempel, Jürgen Bläsing, Jürgen Christen, and Alois Krost
11:30 HL 29.8 Surface atomic arrangements of polar (000-1) and semipolar (11-22) InN layers. — •Daria Skuridina, Sabine Alamé, Duc Dinh, Michael Kneissl, and Patrick Vogt
11:45 HL 29.9 Growth of (2021) AlGaN, GaN and InGaN by metal organic vapor phase epitaxy — •S. Ploch, T. Wernicke, J. Rass, M. Pristovsek, M. Weyers, and M. Kneissl
12:00 HL 29.10 Active region design and MOVPE growth of UV–B light emitting diodes — •F. Mehnke, J. Stellmach, T. Kolbe, M.-A. Rothe, C. Reich, T. Wernicke, M. Pristovsek, and M. Kneissl
12:15 HL 29.11 Crystal field investigations of rare earth doped aluminum nitride — •Ulrich Vetter, Tristan Koppe, Takashi Taniguchi, John B. Gruber, Gary W. Burdick, and Hans Hofsäss
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