Berlin 2012 – wissenschaftliches Programm

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HL: Fachverband Halbleiterphysik

HL 3: Focus Session: VECSEL

HL 3.4: Hauptvortrag

Montag, 26. März 2012, 11:15–11:45, ER 164

Novel wavelength VECSELs via intracavity Raman conversion and InP quantum dots — •Jennifer E. Hastie, Peter J. Schlosser, Daniele C. Parrotta, Alan J. Kemp, and Martin D. Dawson — Institute of Photonics, University of Strathclyde, 106 Rottenrow, Glasgow G4 0NW, UK

In this talk we will present our recent work demonstrating intracavity Raman conversion of VECSELs, a nonlinear means to red-shift the emission wavelength of these high brightness semiconductor lasers. Practically, this involves the development of low-loss CW crystalline Raman lasers pumped by the VECSEL intracavity field, with tuning of the Raman laser achieved via tuning of the VECSEL oscillation wavelength. We reported a KGW Raman laser emitting around 1150nm, and more recently a diamond Raman laser with broad tuning around 1230nm, both pumped within the high finesse cavity of an InGaAs-based VECSEL. Multi-Watt Raman laser output power has been achieved with efficiency >14% w.r.t. diode pump power absorbed by the VECSEL. As well as addressing gaps in spectral coverage, Raman conversion is potentially an attractive alternative to the use of highly strained gain structures or less robust materials required for direct emission at longer wavelengths, without significant cost to power and efficiency.

The extension of VECSEL spectral coverage via novel semiconductor materials and gain structure design remains an important focus of our research, in parallel to our work on nonlinear conversion, and during the talk we will also briefly review our work on directly visible VECSELs utilising AlGaInP quantum wells and InP quantum dots.