Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 32: Transport Properties I (mainly Spin Physics and Magnetic Fields)
HL 32.11: Talk
Tuesday, March 27, 2012, 12:45–13:00, EW 203
Exchange interaction of electrons with Mn in hybrid AlSb/InAs/ZnMnTe structures — •P. Olbrich1, C. Zoth1, Ya. V. Terent’ev2, V. V. Bel’kov2, C. Drexler1, V. Lechner1, P. Lutz1, M. S. Mukhin2, S. A. Tarasenko2, A. N. Semenov2, V. A. Solov’ev2, G. V. Klimko2, T. A. Komissarova2, S. V. Ivanov2, and S. D. Ganichev1 — 1University of Regensburg, Regensburg, Germany — 2Ioffe Institute, St. Petersburg, Russia
Here we report on the fabrication an investigation of Manganese modulation doped structures with an InAs two-dimensional electron gas (2DEG) channel. The quantum wells were grown applying III-V/II-VI “hybrid” technique and Mn layers have been inserted into the II-VI barrier. To explore the magnetic properties of the 2DEG we investigated spin polarized electric currents induced by microwave (mw) and terahertz (THz) radiation [1]. Our measurements show that hybrid AlSb/InAs/(Zn,Mn)Te QWs are characterized by enhanced magnetic properties which can be changed by tuning of the spatial position of the Mn-doping layer as well as by the variation of temperature. We demonstrate that the exchange interaction is due to penetration of the electronic wave function into the (Zn,Mn)Te layer and can be controllably varied by the position and density of Mn2+ ions [2].
[1] S. D. Ganichev et al., Phys. Rev. Lett. 102, 156602 (2009)
[2] Ya. V. Terent’ev et al., Appl. Phys. Lett. 99, 072111 (2011)