Parts | Days | Selection | Search | Updates | Downloads | Help
HL: Fachverband Halbleiterphysik
HL 32: Transport Properties I (mainly Spin Physics and Magnetic Fields)
HL 32.8: Talk
Tuesday, March 27, 2012, 12:00–12:15, EW 203
Dyakonov-Perel electron spin relaxation in a wurtzite semiconductor: From the nondegenerate to the highly degenerate regime — •Jörg Rudolph1, Jan Heye Buss1, Sebastian Starosielec1, Arne Schaefer1, Fabrice Semond2, and Daniel Hägele1 — 1AG Spektroskopie der kondensierten Materie, Ruhr-Universität Bochum, Bochum, Germany — 2Centre de Recherche sur l’Hétéro-Epitaxie et ses Applications, Valbonne, France
The doping density dependence of the electron spin lifetime in n-type semiconductors gives insight into the interplay between spin-orbit coupling, phase space filling and momentum scattering. We measure electron spin lifetimes in bulk n-type GaN as a prototypical semiconductor with wurtzite structure by time-resolved Kerr-rotation spectroscopy for a wide range of doping densities from 5× 1015 to 1.5× 1019 cm−3. The spin lifetime follows a non-monotonic density dependence with a maximum at the onset of degeneracy. The maximum is found to shift toward higher densities for increasing
lattice temperature. The additional determination of momentum scattering times in the degenerate regime allows for a direct comparison to an analytical expression for the density-dependent spin relaxation tensor for wurtzite semiconductors. Quantitative agreement is found up to the highest densities without any fitting parameter.[1]
[1] J. H. Buß et al., Phys. Rev. B 84,
153202 (2011)