Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 33: Ge/Si II
HL 33.4: Vortrag
Dienstag, 27. März 2012, 10:15–10:30, EW 015
Electrical characterization of Ge nanodomes via AFM based techniques — •Markus Kratzer1, Christian Prehal1, Maria Rubezhanska2, Sergey Kondratenko3, Yury Kozyrev2, and Christian Teichert1 — 1Institute of Physics, Montanuniversität Leoben, Franz Josef Straße 18, 8700 Leoben, Austria — 2O.O. Chuiko Institute of Surface Chemistry, National Academy of Sciences of Ukraine, Kiev, Ukraine — 3National Taras Shevchenko University, Physics Department, Kiev, Ukraine
Low-dimensional nanostructures like nanodots, nanowires, and nanodomes (NDs) have attracted scientific interest due to their potential application in electronics, optoelectronics, and photovoltaics. In this work, we report on the electrical characterization of single Ge nanodomes utilizing conductive atomic force microscopy (C-AFM), photoconductive AFM (PC-AFM), and Kelvin Probe force microscopy (KPFM). The Ge NDs were grown on Si(001) by means of molecular beam epitaxy (MBE) under ultra-high vacuum (UHV) conditions. The AFM measurements were performed under ambient conditions in dark and under illumination. Two-dimensional current maps revealed a higher conductivity of the NDs compared to the surrounding. Conductivity variations within single NDs could be observed, which will be discussed with respect to ND facets and strain-induced changes in the local density of states. Current-to-voltage (IV) measurements on individual NDs revealed a dependence of the IV characteristics on the ND size. Support in the framework of the Ukrainian-Austrian Project M/139-2007 is acknowledged.