Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 37: Quantum Dots and Wires: Optical Properties I (mainly InGaAs Dots)
HL 37.10: Vortrag
Dienstag, 27. März 2012, 13:00–13:15, ER 164
Single site-controlled InGaAs quantum dots: narrow linewidth and electrical current injection — •Alexander Huggenberger1, Christian Schneider1, Tobias Heindel1, Alexander Niederstrasser1, Stephan Reitzenstein1,2, Sven Höfling1, Lukas Worschech1, Alfred Forchel1, and Martin Kamp1 — 1Wilhelm Conrad Röntgen-Center for Complex Material Systems und Technische Physik, Universität Würzburg — 2Institut für Festkörperphysik, Technische Universität Berlin
Site-controlled quantum dots (SCQDs) offer a scalable way to integrate single quantum dots (QDs) into devices like single photon sources or sources of entangled photons. There are different ways to direct the QD nucleation to pre-defined positions. In our work we use ebeam lithography and wet etching of nano-holes into a GaAs (100) substrate to obtain both control over the QD position and high optical quality of the SCQDs. With our approach we can reduce the effect of spectral diffusion that broadens the single SCQD emission.
We present our results on the improved optical quality of site-controlled quantum dots that can be excited either optically or electrically. The linewidth of single SCQD photoluminescence could be reduced to only 38 µeV for above bandgap optical excitation. Furthermore, we show the integration of site-controlled QDs into optical cavities and achieve cavity enhanced emission as well as emission of non-classical light under electrical current injection.