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11:15 |
HL 38.1 |
Characterization of grain boundaries in Cu(In,Ga)Se2 by atom probe tomography — •Torsten Schwarz, Oana Cojocaru-Miredin, Pyuck-Pa Choi, Roland Würz, and Dierk Raabe
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11:30 |
HL 38.2 |
Correlation of surface contour, optoelectronic and spectroscopic properties of Cu(In,Ga)Se2 by SNOM and AFM — •Oliver Neumann, Stephan J. Heise, Rudolf Brüggemann, Max Meessen, Wolfram Witte, Dimitrios Hariskos, and Gottfried H. Bauer
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11:45 |
HL 38.3 |
Sub-band-gap absorption of Cu(In,Ga)Se2 thin film semiconductors — •Max Meessen, Rudolf Brüggemann, and Gottfried H. Bauer
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12:00 |
HL 38.4 |
Investigation of defects in Cu(In,Ga)S2 and Cu(In,Ga)Se2 solar cells by space charge spectroscopy — •Julia Riediger, Jörg Ohland, Martin Knipper, Jürgen Parisi, Ingo Riedel, and Alexander Meeder
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12:15 |
HL 38.5 |
The influence of CdS buffer layer thickness on low-temperature deposited Cu(In,Ga)Se2 solar cells — •Stefan Puttnins, Thomas Unold, Philipp Krüger, Felix Daume, Karsten Pelz, Andreas Rahm, and Marius Grundmann
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12:30 |
HL 38.6 |
Capacitance-spectroscopical investigations of the influence of buffer layers on defect generation in CIGS solar cells — •Robert Karsthof, Stefan Puttnins, Karsten Pelz, Matthias Schmidt, and Marius Grundmann
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12:45 |
HL 38.7 |
Investigations of lateral and vertical compositional gradients in Cu(In,Ga)Se2 prepared through Rapid Thermal Processing by highly spatially and spectrally resolved cathodoluminescence spectroscopy — •Mathias Müller, Stefan Ribbe, Frank Bertram, Thomas Hempel, Humberto Rodriguez-Alvarez, Jakob Lauche, Hans-Werner Schock, and Jürgen Christen
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13:00 |
HL 38.8 |
Investigations of vertical chemical gradients in Cu(In,Ga)S2- thin films prepared by sulfurization of sputtered precursor layers using highly spatially resolved cathodoluminescence microscopy — •Stefan Ribbe, Mathias Müller, Frank Bertram, Thomas Hempel, Humberto Rodriguez-Alvarez, Jakob Lauche, Hans Werner Schock, and Jürgen Christen
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