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HL: Fachverband Halbleiterphysik

HL 39: ZnO and Relatives II

HL 39.4: Vortrag

Dienstag, 27. März 2012, 12:15–12:30, EW 202

Electrical characterization of proton-irradiated MgZnO thin films — •Florian Schmidt¹, Matthias Schmidt¹, Holger von Wenckstern¹, Daniel Spemann², and Marius Grundmann¹ — ¹Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Halbleiterphysik, Linnéstraße 5, 04103 Leipzig — ²Universität Leipzig, Institut für Experimentelle Physik II, Abteilung Nukleare Festkörperphysik, Linnéstraße 5, 04103 Leipzig

Zinc oxide (ZnO) is a semiconductor which is known for its high radiation hardness making the material suitable for space applications. Ternary MgZnO is an excellent material system for the fabrication of quantum well heterostructures and thus for potential application in exciton-related photonic devices. Whereas the influence of proton bombardment on the incorporation of defects in pure ZnO has been reported [1], no data are yet available regarding the exposure of MgZnO to protons. To study the effect of radiation, Mg_1−xZn_xO thin films with Mg contents of 0 ≤ x ≤ 2 % were irradiated by 2.25   MeV protons with fluences ranging from 1 × 10¹³   cm⁻² to 2 × 10¹⁴   cm⁻². The samples grown by pulsed-laser deposition were characterized by means of C-V measurements, deep level transient spectroscopy (DLTS) and Laplace DLTS. The proton irradiation generates a deep-level, labelled E4 in the literature, which has been tentatively assigned to the oxygen vacancy [1,2]. The generation rate of the defect in the MgZnO thin films was determined.

[1] F. D. Auret et al., Appl. Phys. Lett., 79(19), 3074 (2001).

[2] T. Frank et al., Appl. Phys. A 88, 141 (2007).