Berlin 2012 – wissenschaftliches Programm
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HL: Fachverband Halbleiterphysik
HL 39: ZnO and Relatives II
HL 39.7: Vortrag
Dienstag, 27. März 2012, 13:00–13:15, EW 202
Hydrostatic pressure dependence of the refractive index in ZnO and GaN — •Felix Käss1,2, Juan Sebastian Reparaz1,2, Gordon Callsen2, Markus Raphael Wagner2, Alejandro Rodolfo Goñi1,3, Maria Isabel Alonso1, Miquel Garriga1, and Axel Hoffmann2 — 1Institut de Ciència de Materials de Barcelona-CSIC, Esfera UAB, 08193, Bellaterra, Spain — 2Institut für Festkörperphysik, Technische Universität Berlin, Hardenbergstr. 36, u o a 10623 Berlin, Germany — 3ICREA, Passeig Lluís Companys 23, 08010 Barcelona, Spain
In this work we will present the hydrostatic pressure dependence of the real part of the refractive index in ZnO and GaN. By using a diamond anvil cell (DAC) combined with an optical transmission experiment we study the Fabry-Pérot interferences in the transparency region (approx. below 3.2 eV). A large series of interference peaks arising from the cavity-modes allow for the determination of the energy dependent refractive index. Many experimental complications which we found to be critical will be discussed in detail, leading to a detailed description of the optimum characteristics which are required for an ethalon to optically manifest in the DAC enviroment.