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HL: Fachverband Halbleiterphysik

HL 4: GaN: Preparation and Characterization I (mainly Optics)

HL 4.1: Vortrag

Montag, 26. März 2012, 09:30–09:45, EW 201

Study of site symmetry from Europium (Eu⁺³) luminescence in Europium-implanted p-GaN — •Jayanta Kumar Mishra¹, Torsten Langer¹, Uwe Rossow¹, Kirill Trunov², Andreas Wieck², and Andreas Hangleiter¹ — ¹Institut für Angewandte Physik, TU Braunschweig — ²Angewandte Festkörperphysik, Ruhr-Universität Bochum, Germany

Rare earth ions implanted into nitrides are promising for optoelectronic applications. In GaN, Europium is in a 3+ charge state. We studied the Eu³⁺ luminescence in Mg doped GaN. The most prominent luminescence is observed from the transition ⁵D₀→⁷F₂. This transition further splits into several lines as the degeneracy of the ground state has been lifted. The contributions to this transition were found to be not only from a single Europium center but rather it is composed of different Europium centers in GaN. Considering the number of peaks from ⁵D₀→⁷F₂ transition it would imply that Eu might not have occupied C_3v symmetry site, the Ga substitutional position.

We observed higher Eu³⁺ luminescence and more peaks for ⁵D₀→⁷F₂ transition from Mg doped GaN:Eu than from undoped GaN:Eu. In Mg doped GaN more Eu sites contribute to ⁵D₀→⁷F₂ transition.

The intensities of the split peaks of the ⁵D₀→⁷F₂ transition are varying differently with temperature, which is further evidence for the presence of different Eu sites in Mg doped GaN:Eu.