Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 4: GaN: Preparation and Characterization I (mainly Optics)
HL 4.5: Talk
Monday, March 26, 2012, 10:30–10:45, EW 201
Systematic optical characterization of InAlN/GaN heterostructures with different In content — •María Fátima Romero, Martin Feneberg, Rüdiger Goldhahn, Pascal Moser, Armin Dadgar, and Alois Krost — Institut für Experimentelle Physik, Otto-von-Guericke-Universität, Magdeburg, Germany
The luminescence properties of InxAl1−xN/GaN heterostructures are systematically investigated as a function of the In content (6.7 %-20.8 %). The recombination between the electrons confined in the two-dimensional-electron-gas (2DEG) at the heterointerface, and the photoexcited holes in the GaN buffer is identified and analyzed. We find a systematic shift of the recombination with the In content from about 80 meV below the GaN exciton emission (for x=0.067), to only few meV with increasing In concentration. These results are compared with theoretical model calculations and can be understood with changing band alignment and polarization offset between AlInN and GaN.