Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 43: Poster Session: Quantum Dots and Wires - Preparation and Characterization / Devices (incl. Laser) / Ultrafast Phenomena
HL 43.11: Poster
Tuesday, March 27, 2012, 09:30–12:30, Poster D
Structural characterization of InAs and In0.25Ga0.75As/GaAs nanostructures grown on GaP(001) — •Christopher Prohl, Yannick Rodriguez Sillke, Andrea Lenz, Josephine Schuppang, Murat Öztürk, Gernot Stracke, André Strittmatter, Dieter Bimberg, Holger Eisele, and Mario Dähne — Institut für Festkörperphysik, Technische Universität Berlin
Due to the low lattice mismatch, GaP is an interesting material for the implementation of III-V-semiconductor applications into silicon-based technology. Therefore, the development of epitaxially grown nanostructures on GaP substrates for opto-electronic devices, like quantum dots, is an interesting task. InAs/GaP quantum dots are also promising for new nanomemory cells due to higher expected localization energies of the charge carriers inside the QDs than in InAs/GaAs QDs, resulting in longer storage times. In this contribution, first results of molecular beam epitaxy (MBE) grown samples of InAs quantum dots on a GaP(001) substrate, characterized by reflection high energy diffraction (RHEED) and scanning tunneling microscopy (STM) will be presented. RHEED clearly shows a 2D→3D transition, while first STM images show 3D islands, which are similar in size and density to comparable InAs/GaAs QDs. Furthermore, capped In0.25Ga0.75As/GaAs/GaP and GaAs/GaP nanostructures grown by metal organic vapor phase epitaxy (MOVPE) were identified by cross-sectional STM (XSTM). XSTM images of In0.25Ga0.75As/GaAs/GaP and 2 ML GaAs on GaP(001) show that the GaAs is not assembled within the nominal 2 ML, but segregated along growth direction.