Berlin 2012 – scientific programme
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HL: Fachverband Halbleiterphysik
HL 43: Poster Session: Quantum Dots and Wires - Preparation and Characterization / Devices (incl. Laser) / Ultrafast Phenomena
HL 43.14: Poster
Tuesday, March 27, 2012, 09:30–12:30, Poster D
Characterization of tensile-strained GaAs/GaSb nanostructures — •Jan Große1, Andrea Lenz1, Josephine Schuppang1, Holger Eisele1, Marie Duhamel2, Alban Gassenq3, Thierry Talierco3, Eric Tournie3, and Mario Dähne1 — 1Technische Universität Berlin, Institut für Festkörperphysik, Hardenbergstr. 36, 10623 Berlin, Germany — 2Institut Supérieur de l'Electronique et du Numérique, 41 Boulevard Vauban, 59046 Lille cedex, France — 3Université Montpellier 2, Institut d'Electronique du Sud, UMR CNRS 5214, 34095 Montpellier cedex 5, France
The Ga(In)As/GaSb material system may act as a model system for tensile-strained nanostructures, which are promising for near-to-mid infrared applications. However, compared to a compressively strained system such as In(Ga)As/GaAs the structural properties of tensile-strained layers are practically unexplored up to now. In order to investigate the size, shape, and stoichiometry of semiconductor nanostructures, cross-sectional scanning tunneling microscopy (XSTM) is a very powerful method. Here, we present an XSTM study of the characteristics of different GaAs layers with varying nominal layer thickness grown by molecular beam epitaxy (MBE). Atomically resolved XSTM-images will be presented, which show a non-coherent wetting layer as well as some agglomerations for one and two monolayer (ML) thick GaAs films and the formation of quantum dot-like structures in case of three and four ML thick GaAs films.