Berlin 2012 – scientific programme

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HL: Fachverband Halbleiterphysik

HL 43: Poster Session: Quantum Dots and Wires - Preparation and Characterization / Devices (incl. Laser) / Ultrafast Phenomena

HL 43.20: Poster

Tuesday, March 27, 2012, 09:30–12:30, Poster D

(contribution withdrawn) High Temperature Characteristics of Tungsten/Silicon Schottky Diodes — •Markus Arnold, Michael Pleul, Daniel Lehmann, and Dietrich R. T. Zahn — Semiconductor Physics, Chemnitz University of Technology, 09107 Chemnitz, Germany

For Schottky diodes the diffusion of metal into the semiconductor at elevated temperature plays an important role for the properties as traps are created at or close to the interface.

The electrical behaviour of three types of Schottky diodes is compared at high temperatures. Tungsten is the contact metal for all cases, but the silicon substrate is varied between p-doped, nominally undoped, and n-doped. In situ current-voltage (I-V) measurements and capacitance-voltage (C-V) measurements of Tungsten/Silicon Schottky diodes are presented.

The Schottky diodes are annealed up to 700 °C in vacuo to characterise the diode stability during annealing. The influence of the dopant species on the barrier height and the diffusion properties are discussed. Deep-level transient spectroscopy (DLTS) measurements are presented revealing the annealing dependent trap concentration at the Schottky interface.